IXFK32N80Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

30 Weeks

Configuration :

Single

Rise Time :

300ns

FET Feature :

--

Number of Terminals :

3

Power Dissipation (Max) :

1000W (Tc)

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Series :

HiPerFET™

Maximum Operating Temperature :

+ 150 C

Number of Pins :

3

Surface Mount :

No

Terminal Position :

Single

Power Dissipation :

1kW

Number of Elements :

1

Element Configuration :

Single

Product Status :

Active

Reach Compliance Code :

Compliant

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

45 ns

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Height :

26.16mm

Mount :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package :

Tube

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

800V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-264AA

Mounting Type :

Through Hole

Brand :

IXYS

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

6940pF @ 25V

Transistor Application :

SWITCHING

Supplier Device Package :

TO-264AA (IXFK)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

32A

Drain to Source Voltage (Vdss) :

800V

Length :

19.96mm

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFK32

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

32 A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

1000 W

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminations :

3

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Width :

5.13mm

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

80A

Package / Case :

TO-264-3, TO-264AA

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Power Dissipation-Max :

1000W Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

DS Breakdown Voltage-Min :

800 V

Published :

2005

Drain-source On Resistance-Max :

0.27Ohm

Rds On (Max) @ Id, Vgs :

270m Ω @ 16A, 10V

Turn On Delay Time :

38 ns

Terminal Form :

THROUGH-HOLE