IXFK32N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn-Off Delay Time :

76 ns

JEDEC-95 Code :

TO-264AA

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 25V

Case Connection :

DRAIN

Number of Channels :

1 Channel

Product Category :

MOSFET

Rise Time :

55ns

Power Dissipation :

960W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Height :

26.16 mm

Package Shape :

RECTANGULAR

Length :

19.96 mm

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

43 ns

Pin Count :

3

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Published :

2008

Power Dissipation (Max) :

960W (Tc)

Product Status :

Active

Avalanche Energy Rating (Eas) :

1500 mJ

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

32A

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Drain Current-Max (Abs) (ID) :

32 A

Power Dissipation-Max (Abs) :

960 W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

320m Ω @ 16A, 10V

Factory Lead Time :

30 Weeks

Type :

Polar Power MOSFET HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Configuration :

Single

Drain to Source Voltage (Vdss) :

1000V

Brand :

IXYS

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

1kV

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Transistor Type :

1 N-Channel

RoHS :

Details

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.32Ohm

Number of Elements :

1

Package :

Tube

DS Breakdown Voltage-Min :

1000 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-264-3, TO-264AA

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Width :

5.13 mm

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e1

Lead Free :

Lead Free

Series :

HiPerFET™, PolarP2™

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Terminal Position :

Single

Power Dissipation-Max :

960W Tc

Base Product Number :

IXFK32

Supplier Device Package :

TO-264AA (IXFK)

Element Configuration :

Single

Product Type :

MOSFET

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

75A

Packaging :

Tube

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR