IXFK27N80
- Mfr.Part #
- IXFK27N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 27A TO264AA
- Stock
- 7,047
- In Stock :
- 7,047
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 500 W
- Base Product Number :
- IXFK27
- Pin Count :
- 3
- Surface Mount :
- No
- Power Dissipation :
- 500W
- Product Status :
- Active
- Height :
- 26.16 mm
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 27 A
- Turn-Off Delay Time :
- 75 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 400nC @ 10V
- Transistor Polarity :
- N-Channel
- Length :
- 19.96 mm
- Manufacturer :
- IXYS
- Package :
- Tube
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 108A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- Current Rating :
- 27A
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13.5A, 10V
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 40 ns
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-264AA
- Number of Elements :
- 1
- Voltage - Rated DC :
- 800V
- Rise Time :
- 80ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 9740pF @ 25V
- Continuous Drain Current (ID) :
- 27A
- Pbfree Code :
- yes
- Package / Case :
- TO-264-3, TO-264AA
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.3 Ω
- Published :
- 2000
- Transistor Application :
- SWITCHING
- Width :
- 5.13 mm
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Drain to Source Voltage (Vdss) :
- 800V
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 500W (Tc)
- Series :
- HiPerFET™
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Tradename :
- HyperFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800 V
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Power Dissipation Ambient-Max :
- 500 W
- Power Dissipation-Max :
- 500W Tc
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Details
- Brand :
- IXYS
- Datasheets
- IXFK27N80

N-Channel Tube 300m Ω @ 13.5A, 10V ±20V 9740pF @ 25V 400nC @ 10V 800V TO-264-3, TO-264AA
IXFK27N80 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9740pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 27A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 27 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK27N80 Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 800V drain to source voltage (Vdss)
IXFK27N80 Applications
There are a lot of IXYS
IXFK27N80 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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