IXFK27N80

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Mfr.Part #
IXFK27N80
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 27A TO264AA
Stock
7,047
In Stock :
7,047

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
500 W
Base Product Number :
IXFK27
Pin Count :
3
Surface Mount :
No
Power Dissipation :
500W
Product Status :
Active
Height :
26.16 mm
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
27 A
Turn-Off Delay Time :
75 ns
Gate Charge (Qg) (Max) @ Vgs :
400nC @ 10V
Transistor Polarity :
N-Channel
Length :
19.96 mm
Manufacturer :
IXYS
Package :
Tube
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
108A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Channel Mode :
Enhancement
Current Rating :
27A
Rds On (Max) @ Id, Vgs :
300m Ω @ 13.5A, 10V
Package Shape :
RECTANGULAR
Fall Time (Typ) :
40 ns
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
JEDEC-95 Code :
TO-264AA
Number of Elements :
1
Voltage - Rated DC :
800V
Rise Time :
80ns
Input Capacitance (Ciss) (Max) @ Vds :
9740pF @ 25V
Continuous Drain Current (ID) :
27A
Pbfree Code :
yes
Package / Case :
TO-264-3, TO-264AA
Packaging :
Tube
Drain-source On Resistance-Max :
0.3 Ω
Published :
2000
Transistor Application :
SWITCHING
Width :
5.13 mm
Configuration :
Single
Drain to Source Breakdown Voltage :
800V
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Drain to Source Voltage (Vdss) :
800V
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
500W (Tc)
Series :
HiPerFET™
Minimum Operating Temperature :
- 55 C
Mount :
Through Hole
Case Connection :
DRAIN
Mounting Type :
Through Hole
Tradename :
HyperFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
800 V
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
27A Tc
Number of Channels :
1 Channel
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Power Dissipation Ambient-Max :
500 W
Power Dissipation-Max :
500W Tc
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Number of Terminals :
3
Supplier Device Package :
TO-264AA (IXFK)
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Number of Pins :
3
JESD-30 Code :
R-PSFM-T3
RoHS :
Details
Brand :
IXYS
Datasheets
IXFK27N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFK27N80 pinout, IXFK27N80 datasheet PDF, IXFK27N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK27N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK27N80


N-Channel Tube 300m Ω @ 13.5A, 10V ±20V 9740pF @ 25V 400nC @ 10V 800V TO-264-3, TO-264AA

IXFK27N80 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9740pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 27A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 27 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK27N80 Features


a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 800V drain to source voltage (Vdss)


IXFK27N80 Applications


There are a lot of IXYS
IXFK27N80 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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