IXFK26N90

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Mfr.Part #
IXFK26N90
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 26A TO-264
Stock
8,941
In Stock :
8,941

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264AA (IXFK)
Base Product Number :
IXFK26
RoHS :
Details
Package / Case :
TO-264-3, TO-264AA
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-264
Width :
5.13mm
Channel Mode :
Enhancement
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Continuous Drain Current (ID) :
26A
Drain Current-Max (Abs) (ID) :
26 A
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
Fall Time (Typ) :
24 ns
Drain-source On Resistance-Max :
0.3 Ω
Drain to Source Breakdown Voltage :
900V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Product Type :
MOSFET
Turn On Delay Time :
60 ns
Input Capacitance (Ciss) (Max) @ Vds :
10800pF @ 25V
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Series :
HiPerFET™
Tradename :
HyperFET
Gate to Source Voltage (Vgs) :
20V
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
104A
Turn-Off Delay Time :
130 ns
Power Dissipation (Max) :
560W (Tc)
Power Dissipation-Max :
560W Tc
FET Feature :
--
Manufacturer :
IXYS
Number of Elements :
1
Configuration :
Single
Drain to Source Voltage (Vdss) :
900V
RoHS Status :
RoHS Compliant
Surface Mount :
No
Transistor Element Material :
SILICON
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
DS Breakdown Voltage-Min :
900 V
Length :
19.96mm
Published :
2003
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Brand :
IXYS
Power Dissipation :
560W
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
3000 mJ
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Vgs (Max) :
±20V
Product Status :
Not For New Designs
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
35ns
Reach Compliance Code :
Compliant
Mount :
Through Hole
Height :
26.16mm
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Mounting Type :
Through Hole
Package :
Tube
Rds On (Max) @ Id, Vgs :
300m Ω @ 13A, 10V
Power Dissipation-Max (Abs) :
560 W
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Pins :
3
Datasheets
IXFK26N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK26N90 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, IXFK26N90 pinout, IXFK26N90 datasheet PDF, IXFK26N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK26N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK26N90


N-Channel Tube 300m Ω @ 13A, 10V ±20V 10800pF @ 25V 240nC @ 10V 900V TO-264-3, TO-264AA

IXFK26N90 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Drain current refers to the maximum continuous current a device can conduct, and it is 26 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 130 ns.Peak drain current is 104A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900 V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFK26N90 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 104A.
a 900V drain to source voltage (Vdss)


IXFK26N90 Applications


There are a lot of IXYS
IXFK26N90 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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