IXFK26N90
- Mfr.Part #
- IXFK26N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 26A TO-264
- Stock
- 8,941
- In Stock :
- 8,941
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Base Product Number :
- IXFK26
- RoHS :
- Details
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-264
- Width :
- 5.13mm
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 26A
- Drain Current-Max (Abs) (ID) :
- 26 A
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 24 ns
- Drain-source On Resistance-Max :
- 0.3 Ω
- Drain to Source Breakdown Voltage :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Turn On Delay Time :
- 60 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™
- Tradename :
- HyperFET
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 104A
- Turn-Off Delay Time :
- 130 ns
- Power Dissipation (Max) :
- 560W (Tc)
- Power Dissipation-Max :
- 560W Tc
- FET Feature :
- --
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 900V
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 900 V
- Length :
- 19.96mm
- Published :
- 2003
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Brand :
- IXYS
- Power Dissipation :
- 560W
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Product Status :
- Not For New Designs
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 35ns
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Height :
- 26.16mm
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Mounting Type :
- Through Hole
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 13A, 10V
- Power Dissipation-Max (Abs) :
- 560 W
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Pins :
- 3
- Datasheets
- IXFK26N90

N-Channel Tube 300m Ω @ 13A, 10V ±20V 10800pF @ 25V 240nC @ 10V 900V TO-264-3, TO-264AA
IXFK26N90 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 26A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Drain current refers to the maximum continuous current a device can conduct, and it is 26 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 130 ns.Peak drain current is 104A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900 V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK26N90 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 104A.
a 900V drain to source voltage (Vdss)
IXFK26N90 Applications
There are a lot of IXYS
IXFK26N90 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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