IXFK26N100P
- Mfr.Part #
- IXFK26N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 26A TO264AA
- Stock
- 35,129
- In Stock :
- 35,129
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.39Ohm
- Series :
- HiPerFET™, PolarP2™
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Published :
- 2008
- Vgs (Max) :
- ±30V
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 20A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 50 ns
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 1kV
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 72 ns
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 30 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 780W
- Drain Current-Max (Abs) (ID) :
- 26A
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 13A, 10V
- Product Status :
- Active
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- FET Feature :
- --
- JESD-609 Code :
- e1
- Height :
- 26.16 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Length :
- 19.96 mm
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 11900pF @ 25V
- DS Breakdown Voltage-Min :
- 1000 V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Surface Mount :
- No
- Brand :
- IXYS
- Base Product Number :
- IXFK26
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 65A
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 780 W
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Power Dissipation-Max :
- 780W Tc
- Width :
- 5.13 mm
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 780W (Tc)
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Rise Time :
- 45ns
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXFK26N100P

N-Channel Tube 390m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V TO-264-3, TO-264AA
IXFK26N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 26A.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 65A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK26N100P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 65A.
a 1000V drain to source voltage (Vdss)
IXFK26N100P Applications
There are a lot of IXYS
IXFK26N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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