IXFK26N100P

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Mfr.Part #
IXFK26N100P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 26A TO264AA
Stock
35,129
In Stock :
35,129

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Drain-source On Resistance-Max :
0.39Ohm
Series :
HiPerFET™, PolarP2™
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
FET Type :
N-Channel
Published :
2008
Vgs (Max) :
±30V
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
20A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
50 ns
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
1kV
Channel Mode :
Enhancement
Turn-Off Delay Time :
72 ns
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Factory Lead Time :
30 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Package :
Tube
Terminal Form :
THROUGH-HOLE
Power Dissipation :
780W
Drain Current-Max (Abs) (ID) :
26A
Rds On (Max) @ Id, Vgs :
390m Ω @ 13A, 10V
Product Status :
Active
Supplier Device Package :
TO-264AA (IXFK)
Product Type :
MOSFET
Number of Elements :
1
Drain to Source Voltage (Vdss) :
1000V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pin Count :
3
FET Feature :
--
JESD-609 Code :
e1
Height :
26.16 mm
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Length :
19.96 mm
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
11900pF @ 25V
DS Breakdown Voltage-Min :
1000 V
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Mount :
Through Hole
Manufacturer :
IXYS
Element Configuration :
Single
Surface Mount :
No
Brand :
IXYS
Base Product Number :
IXFK26
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
65A
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Power Dissipation-Max (Abs) :
780 W
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-264AA
RoHS :
Details
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation-Max :
780W Tc
Width :
5.13 mm
Qualification Status :
Not Qualified
Power Dissipation (Max) :
780W (Tc)
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Rise Time :
45ns
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFK26N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK26N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFK26N100P pinout, IXFK26N100P datasheet PDF, IXFK26N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK26N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK26N100P


N-Channel Tube 390m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V TO-264-3, TO-264AA

IXFK26N100P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 26A.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 65A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK26N100P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 65A.
a 1000V drain to source voltage (Vdss)


IXFK26N100P Applications


There are a lot of IXYS
IXFK26N100P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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