IXFK260N17T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance :

24 nF

Base Product Number :

IXFK260

Qualification Status :

Not Qualified

Power Dissipation-Max :

1670W Tc

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0065ohm

Drain Current-Max (Abs) (ID) :

260 A

DS Breakdown Voltage-Min :

170V

Product Status :

Obsolete

Transistor Application :

SWITCHING

Max Power Dissipation :

1.67 kW

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 60A, 10V

JESD-609 Code :

e1

Rds On Max :

6.5 mΩ

JEDEC-95 Code :

TO-264AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Packaging :

Tube

ECCN Code :

EAR99

Package :

Tube

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max (Abs) :

1670 W

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

700A

Supplier Device Package :

TO-264AA (IXFK)

Number of Elements :

1

Number of Terminations :

3

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

260A

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

Pin Count :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 8mA

Package / Case :

TO-264-3, TO-264AA

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Manufacturer :

IXYS Corporation

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

1670W (Tc)

RoHS :

Compliant

Drain to Source Voltage (Vdss) :

170V

Series :

GigaMOS™

FET Type :

N-Channel

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)