IXFK24N100F
- Mfr.Part #
- IXFK24N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 24A TO264
- Stock
- 32,639
- In Stock :
- 32,639
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 1kV
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Compliant
- Max Operating Temperature :
- 150 °C
- Power Dissipation-Max :
- 560W Tc
- Series :
- HiPerRF™
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 24A
- Fall Time (Typ) :
- 11 ns
- Pulsed Drain Current-Max (IDM) :
- 96A
- JEDEC-95 Code :
- TO-264AA
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS Corporation
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-264 (IXFK)
- Max Power Dissipation :
- 560 W
- Package / Case :
- TO-264-3, TO-264AA
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 18ns
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0039 Ω
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 560W (Tc)
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55 °C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Factory Lead Time :
- 10 Weeks
- Base Product Number :
- IXFK24
- FET Feature :
- --
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Power Dissipation :
- 560W
- DS Breakdown Voltage-Min :
- 1000 V
- FET Type :
- N-Channel
- Published :
- 2003
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- REACH SVHC :
- No SVHC
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 12A, 10V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 52 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Product Status :
- Obsolete
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Resistance :
- 390 mΩ
- Drain to Source Voltage (Vdss) :
- 1000V
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- Package :
- Tube
- Datasheets
- IXFK24N100F

N-Channel Tube 390m Ω @ 12A, 10V ±20V 6600pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA
IXFK24N100F Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 390 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK24N100F Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)
IXFK24N100F Applications
There are a lot of IXYS
IXFK24N100F applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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