IXFK21N100F

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Mfr.Part #
IXFK21N100F
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 21A TO264
Stock
3,685
In Stock :
3,685

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2002
Rise Time :
16ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Series :
HiPerRF™
Drain to Source Breakdown Voltage :
1kV
Fall Time (Typ) :
15 ns
Element Configuration :
Single
DS Breakdown Voltage-Min :
1000 V
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Min Operating Temperature :
-55 °C
Avalanche Energy Rating (Eas) :
2500 mJ
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Drain to Source Voltage (Vdss) :
1000V
JEDEC-95 Code :
TO-264AA
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Resistance :
500 mΩ
Base Product Number :
IXFK21
Package / Case :
TO-264-3, TO-264AA
FET Type :
N-Channel
Pin Count :
3
Drain Current-Max (Abs) (ID) :
21 A
Supplier Device Package :
TO-264 (IXFK)
RoHS :
Compliant
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
84A
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Packaging :
Tube
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
21A
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Power Dissipation :
500W
Power Dissipation-Max (Abs) :
500 W
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
500m Ω @ 10.5A, 10V
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Turn-Off Delay Time :
55 ns
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
21A Tc
ECCN Code :
EAR99
Pbfree Code :
yes
Transistor Application :
SWITCHING
Factory Lead Time :
10 Weeks
Max Operating Temperature :
150 °C
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Max Power Dissipation :
500 W
Power Dissipation-Max :
500W Tc
Number of Pins :
3
Drain-source On Resistance-Max :
0.5Ohm
Power Dissipation (Max) :
500W (Tc)
Datasheets
IXFK21N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK21N100F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFK21N100F pinout, IXFK21N100F datasheet PDF, IXFK21N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK21N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK21N100F


N-Channel Tube 500m Ω @ 10.5A, 10V ±20V 5500pF @ 25V 160nC @ 10V 1000V TO-264-3, TO-264AA

IXFK21N100F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 21 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 84A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 500 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFK21N100F Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 84A.
single MOSFETs transistor is 500 mΩ
a 1000V drain to source voltage (Vdss)


IXFK21N100F Applications


There are a lot of IXYS
IXFK21N100F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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