IXFK20N120

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Mfr.Part #
IXFK20N120
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1200V 20A TO264AA
Stock
49,190
In Stock :
49,190

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264AA (IXFK)
Drain-source On Resistance-Max :
0.75Ohm
Series :
HiPerFET™
Power Dissipation-Max :
780W Tc
Product Status :
Active
JEDEC-95 Code :
TO-264AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
20 ns
Number of Channels :
1 Channel
Mount :
Through Hole
Configuration :
Single
RoHS :
Details
Case Connection :
DRAIN
Power Dissipation (Max) :
780W (Tc)
Drain to Source Breakdown Voltage :
1.2kV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
750m Ω @ 500mA, 10V
Power Dissipation :
780W
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Package / Case :
TO-264-3, TO-264AA
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Avalanche Energy Rating (Eas) :
2000 mJ
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Length :
19.96mm
Product Type :
MOSFET
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
7400pF @ 25V
Mounting Type :
Through Hole
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Published :
2003
Polarity/Channel Type :
N-Channel
Width :
5.13mm
Continuous Drain Current (ID) :
20A
Package Shape :
RECTANGULAR
Brand :
IXYS
Number of Pins :
3
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Element Configuration :
Single
Package :
Tube
Turn-Off Delay Time :
75 ns
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
1200V
Product Category :
MOSFET
Tradename :
HyperFET
Pbfree Code :
yes
Base Product Number :
IXFK20
Transistor Application :
SWITCHING
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
1200 V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Rise Time :
45ns
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
80A
Height :
26.16mm
Mounting Style :
Through Hole
Turn On Delay Time :
25 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFK20N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFK20N120 pinout, IXFK20N120 datasheet PDF, IXFK20N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK20N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK20N120


N-Channel Tube 750m Ω @ 500mA, 10V ±30V 7400pF @ 25V 160nC @ 10V 1200V TO-264-3, TO-264AA

IXFK20N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 7400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1200 V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK20N120 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)


IXFK20N120 Applications


There are a lot of IXYS
IXFK20N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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