IXFK170N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Base Product Number :

IXFK170

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

1150W Tc

FET Feature :

--

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Vgs(th) (Max) @ Id :

5V @ 4mA

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.011Ohm

Mount :

Through Hole

Continuous Drain Current (ID) :

170A

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Compliant

Terminal Position :

Single

Supplier Device Package :

TO-264AA (IXFK)

Package / Case :

TO-264-3, TO-264AA

Length :

19.96 mm

Product Category :

MOSFET

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

200V

Rise Time :

28 ns

Power Dissipation (Max) :

1150W (Tc)

Height :

26.16 mm

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Packaging :

Tube

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Pin Count :

3

Width :

5.13 mm

Input Capacitance (Ciss) (Max) @ Vds :

19600pF @ 25V

Pulsed Drain Current-Max (IDM) :

470A

JESD-609 Code :

e1

Max Power Dissipation :

1.15 kW

Rds On (Max) @ Id, Vgs :

11m Ω @ 60A, 10V

Series :

GigaMOS™

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Terminal Finish :

TIN SILVER COPPER

Input Capacitance :

19.6 nF

Rds On Max :

11 mΩ

Brand :

IXYS

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Published :

2009

Case Connection :

DRAIN

Type :

GigaMOS Power MOSFET

FET Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Factory Lead Time :

30 Weeks

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE