IXFK16N90Q
- Mfr.Part #
- IXFK16N90Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 16A TO264AA
- Stock
- 45,342
- In Stock :
- 45,342
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Turn On Delay Time :
- 21 ns
- Drain to Source Voltage (Vdss) :
- 900V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 19.96mm
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-264-3, TO-264AA
- Surface Mount :
- No
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Base Product Number :
- IXFK16
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Case Connection :
- DRAIN
- Width :
- 5.13mm
- Max Operating Temperature :
- 150 °C
- Turn-On Delay Time :
- 21 ns
- Published :
- 2002
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Rds On Max :
- 650 mΩ
- Input Capacitance :
- 4 nF
- DS Breakdown Voltage-Min :
- 900 V
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 8A, 10V
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 64A
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 360W Tc
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.65Ohm
- Manufacturer :
- IXYS
- Height :
- 26.16mm
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 360 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Power Dissipation :
- 360W
- Continuous Drain Current (ID) :
- 16A
- Drain to Source Breakdown Voltage :
- 900V
- Min Operating Temperature :
- -55 °C
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-264AA
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Tradename :
- HyperFET
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation (Max) :
- 360W (Tc)
- Brand :
- IXYS
- Number of Terminations :
- 3
- RoHS :
- Compliant
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Subcategory :
- MOSFETs
- Fall Time (Typ) :
- 14 ns
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 650 mΩ
- Pin Count :
- 3
- Pbfree Code :
- yes
- Rise Time :
- 24ns
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 56 ns
- Datasheets
- IXFK16N90Q

N-Channel Tube 650m Ω @ 8A, 10V ±20V 4000pF @ 25V 170nC @ 10V 900V TO-264-3, TO-264AA
IXFK16N90Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 650 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK16N90Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 64A.
single MOSFETs transistor is 650 mΩ
a 900V drain to source voltage (Vdss)
IXFK16N90Q Applications
There are a lot of IXYS
IXFK16N90Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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