IXFK16N90Q

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Mfr.Part #
IXFK16N90Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 16A TO264AA
Stock
45,342
In Stock :
45,342

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Turn On Delay Time :
21 ns
Drain to Source Voltage (Vdss) :
900V
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
19.96mm
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-264-3, TO-264AA
Surface Mount :
No
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Number of Elements :
1
Base Product Number :
IXFK16
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Case Connection :
DRAIN
Width :
5.13mm
Max Operating Temperature :
150 °C
Turn-On Delay Time :
21 ns
Published :
2002
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Rds On Max :
650 mΩ
Input Capacitance :
4 nF
DS Breakdown Voltage-Min :
900 V
Rds On (Max) @ Id, Vgs :
650m Ω @ 8A, 10V
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
64A
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
360W Tc
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.65Ohm
Manufacturer :
IXYS
Height :
26.16mm
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
360 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
Vgs(th) (Max) @ Id :
5V @ 4mA
Power Dissipation :
360W
Continuous Drain Current (ID) :
16A
Drain to Source Breakdown Voltage :
900V
Min Operating Temperature :
-55 °C
Packaging :
Tube
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
JEDEC-95 Code :
TO-264AA
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
1500 mJ
Tradename :
HyperFET
Number of Terminals :
3
Element Configuration :
Single
Supplier Device Package :
TO-264AA (IXFK)
Power Dissipation (Max) :
360W (Tc)
Brand :
IXYS
Number of Terminations :
3
RoHS :
Compliant
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Subcategory :
MOSFETs
Fall Time (Typ) :
14 ns
Series :
HiPerFET™
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Drain to Source Resistance :
650 mΩ
Pin Count :
3
Pbfree Code :
yes
Rise Time :
24ns
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Product Type :
MOSFET
Number of Channels :
1 Channel
Turn-Off Delay Time :
56 ns
Datasheets
IXFK16N90Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK16N90Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFK16N90Q pinout, IXFK16N90Q datasheet PDF, IXFK16N90Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK16N90Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK16N90Q


N-Channel Tube 650m Ω @ 8A, 10V ±20V 4000pF @ 25V 170nC @ 10V 900V TO-264-3, TO-264AA

IXFK16N90Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 650 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK16N90Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 64A.
single MOSFETs transistor is 650 mΩ
a 900V drain to source voltage (Vdss)


IXFK16N90Q Applications


There are a lot of IXYS
IXFK16N90Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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