IXFK16N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Mounting Style :

Through Hole

Product Category :

MOSFET

Manufacturer :

IXYS

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.65Ohm

Power Dissipation (Max) :

360W (Tc)

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

16A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Power Dissipation-Max :

360W Tc

Vgs(th) (Max) @ Id :

5V @ 4mA

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Max Power Dissipation :

360 W

Reach Compliance Code :

Compliant

Number of Terminals :

3

Turn-On Delay Time :

21 ns

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFK16

Published :

2002

Package / Case :

TO-264-3, TO-264AA

Transistor Element Material :

SILICON

Width :

5.13mm

Length :

19.96mm

Terminal Form :

THROUGH-HOLE

Input Capacitance :

4 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

24ns

Height :

26.16mm

Brand :

IXYS

Power Dissipation :

360W

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Turn On Delay Time :

21 ns

Drain to Source Voltage (Vdss) :

900V

Subcategory :

MOSFETs

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

56 ns

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

650m Ω @ 8A, 10V

Drain to Source Breakdown Voltage :

900V

Transistor Polarity :

N-Channel

Number of Pins :

3

Mount :

Through Hole

Terminal Position :

Single

JEDEC-95 Code :

TO-264AA

Min Operating Temperature :

-55 °C

RoHS :

Compliant

Packaging :

Tube

Package :

Tube

Series :

HiPerFET™

Configuration :

Single

Tradename :

HyperFET

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Drain to Source Resistance :

650 mΩ

Product Status :

Active

Avalanche Energy Rating (Eas) :

1500 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

14 ns

Case Connection :

DRAIN

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On Max :

650 mΩ

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-264AA (IXFK)

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

64A

Number of Terminations :

3

DS Breakdown Voltage-Min :

900 V