IXFB82N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

200A

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Length :

20.29 mm

Turn-Off Delay Time :

79 ns

Packaging :

Tube

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

600V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Base Product Number :

IXFB82

Max Operating Temperature :

150 °C

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Through Hole

Width :

5.31 mm

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

23ns

Qualification Status :

Not Qualified

Product Status :

Active

Power Dissipation (Max) :

1250W (Tc)

Vgs(th) (Max) @ Id :

5V @ 8mA

Configuration :

Single

Number of Channels :

1 Channel

Rds On Max :

75 mΩ

Max Power Dissipation :

1.25 kW

Reach Compliance Code :

Compliant

Terminal Position :

Single

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

82A

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Tradename :

HiPerFET

Type :

PolarHV HiPerFET Power MOSFET

Drain to Source Breakdown Voltage :

600V

Min Operating Temperature :

-55 °C

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

JESD-609 Code :

e1

Subcategory :

MOSFETs

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Series :

HiPerFET™, PolarHT™

RoHS :

Details

Number of Pins :

3

Number of Terminations :

3

Height :

26.59 mm

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation :

1.25kW

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

5000 mJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Published :

2006

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.075Ohm

Channel Mode :

Enhancement

Pin Count :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

Input Capacitance :

23 nF

Factory Lead Time :

26 Weeks

FET Feature :

--

Supplier Device Package :

PLUS264™

Mount :

Through Hole

DS Breakdown Voltage-Min :

600 V

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Fall Time (Typ) :

24 ns

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1250W Tc

Drain to Source Resistance :

750 mΩ

Package / Case :

TO-264-3, TO-264AA

Rds On (Max) @ Id, Vgs :

75m Ω @ 41A, 10V