IXFB132N50P3

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Mfr.Part #
IXFB132N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 132A PLUS264
Stock
35,702
In Stock :
35,702

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Tradename :
HiPerFET
Series :
HiPerFET™, Polar3™
Terminal Position :
Single
Number of Terminals :
3
Qualification :
-
Continuous Drain Current (ID) :
132A
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Length :
20.29mm
FET Type :
N-Channel
Number of Elements :
1
Number of Elements per Chip :
1
Case Connection :
DRAIN
Product Category :
MOSFET
Turn On Delay Time :
44 ns
Drain Current-Max (Abs) (ID) :
132 A
Threshold Voltage :
5V
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Type :
1 N-Channel
Width :
5.31mm
Power Dissipation-Max :
1890W Tc
Number of Terminations :
3
Continuous Drain Current Id :
132A
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
DS Breakdown Voltage-Min :
500 V
Brand :
IXYS
Rise Time :
9ns
Surface Mount :
No
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
-55 °C
Lead Free :
Lead Free
Turn-Off Delay Time :
72 ns
Published :
2011
Supplier Device Package :
PLUS264™
Drain-source On Resistance-Max :
0.039Ohm
Mounting Style :
Through Hole
Power Dissipation :
1.89kW
Transistor Element Material :
SILICON
Channel Type :
N Channel
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
330A
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
3000 mJ
Vgs (Max) :
±30V
Drain to Source Breakdown Voltage :
500V
ECCN Code :
EAR99
Reach Compliance Code :
Unknown
Factory Lead Time :
26 Weeks
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
500V
Package Type :
PLUS264
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Product Type :
MOSFET
Maximum Operating Temperature :
+150 °C
Gate to Source Voltage (Vgs) :
30V
Transistor Polarity :
N-Channel
RoHS :
Details
Fall Time (Typ) :
8 ns
Pin Count :
3
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
Height :
26.59mm
MSL :
-
Base Product Number :
IXFB132
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Power Dissipation-Max (Abs) :
1890 W
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
1890W (Tc)
Channel Mode :
Enhancement
Number of Pins :
264
Datasheets
IXFB132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:264, IXFB132N50P3 pinout, IXFB132N50P3 datasheet PDF, IXFB132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXFB132N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFB132N50P3 Applications


There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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