IXFB110N60P3
- Mfr.Part #
- IXFB110N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 110A PLUS264
- Stock
- 12,047
- In Stock :
- 12,047
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Length :
- 20.29mm
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Width :
- 5.31mm
- Configuration :
- Single
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Maximum Operating Temperature :
- +150 °C
- Factory Lead Time :
- 26 Weeks
- Height :
- 26.59mm
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Power Dissipation :
- 1.89kW
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.056Ohm
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXFB110
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 245nC @ 10V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 63 ns
- Pulsed Drain Current-Max (IDM) :
- 275A
- Tradename :
- HiPerFET
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 77 ns
- Product Type :
- MOSFET
- Series :
- HiPerFET™, Polar3™
- Channel Type :
- N
- Supplier Device Package :
- PLUS264™
- Rise Time :
- 19ns
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 55A, 10V
- Minimum Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 18000pF @ 25V
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Number of Elements per Chip :
- 1
- Brand :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- RoHS :
- Details
- Package Type :
- PLUS264
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Power Dissipation (Max) :
- 1890W (Tc)
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 1890W Tc
- Number of Terminations :
- 3
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 110A
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 11 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Threshold Voltage :
- 5V
- Number of Pins :
- 264
- Datasheets
- IXFB110N60P3

N-Channel Tube 56m Ω @ 55A, 10V ±30V 18000pF @ 25V 245nC @ 10V 600V TO-264-3, TO-264AA
IXFB110N60P3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 77 ns.Peak drain current for this device is 275A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 63 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFB110N60P3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 275A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFB110N60P3 Applications
There are a lot of IXYS
IXFB110N60P3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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