IXFB60N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation-Max :

1250W Tc

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

60A

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Manufacturer :

IXYS

RoHS :

Details

Number of Terminations :

3

Power Dissipation (Max) :

1250W (Tc)

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Width :

5.31 mm

Product Category :

MOSFET

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.14 Ω

Number of Elements :

1

Resistance :

140mOhm

Package :

Tube

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

800 V

Mounting Type :

Through Hole

Rise Time :

29ns

Product Type :

MOSFET

Base Product Number :

IXFB60

Packaging :

Tube

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Series :

HiPerFET™, PolarHT™

Height :

26.59 mm

Number of Channels :

1 Channel

Published :

2006

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

5000 mJ

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Power Dissipation :

1.25kW

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Number of Pins :

3

Tradename :

HiPerFET

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Fall Time (Typ) :

26 ns

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Package / Case :

TO-264-3, TO-264AA

Package Shape :

RECTANGULAR

Product Status :

Active

Brand :

IXYS

Length :

20.29 mm

Number of Terminals :

3

Drain to Source Breakdown Voltage :

800V

Pulsed Drain Current-Max (IDM) :

150 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Type :

PolarHV HiPerFET Power MOSFET

Supplier Device Package :

PLUS264™

Gate to Source Voltage (Vgs) :

30V

FET Feature :

-

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

140m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

18000pF @ 25V

Reach Compliance Code :

Compliant

Configuration :

Single

Turn-Off Delay Time :

110 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 8mA