IRLS4030-7PPBF
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- Mfr.Part #
- IRLS4030-7PPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- IRLS4030 - HEXFET POWER MOSFET
- Stock
- 33,514
- In Stock ：
- 33,514
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.3378mm
- Element Configuration :
- Single
- Published :
- 2009
- Continuous Drain Current (ID) :
- 190A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation-Max :
- 370W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Width :
- 6.85mm
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 4.5V
- Vgs (Max) :
- ±16V
- Resistance :
- 3.9MOhm
- Height :
- 4.3434mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 190A Tc
- Number of Pins :
- 7
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 110A, 10V
- Turn On Delay Time :
- 53 ns
- Series :
- HEXFET®
- Power Dissipation :
- 370W
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 87 ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 160ns
- Dual Supply Voltage :
- 100V
- Lead Free :
- Lead Free
- Nominal Vgs :
- 2.5 V
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 11490pF @ 50V
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 16V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Threshold Voltage :
- 2.5V
- Packaging :
- Tube
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Turn-Off Delay Time :
- 110 ns
- Datasheets
- IRLS4030-7PPBF
IRLS4030-7PPBF Documents
N-Channel Tube 3.9m Ω @ 110A, 10V ±16V 11490pF @ 50V 140nC @ 4.5V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRLS4030-7PPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11490pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 190A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLS4030-7PPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 110 ns
a threshold voltage of 2.5V
IRLS4030-7PPBF Applications
There are a lot of Infineon Technologies
IRLS4030-7PPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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