IRLS3036PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Pins :

3

Gate to Source Voltage (Vgs) :

16V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

110 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

4.83mm

Case Connection :

DRAIN

JESD-609 Code :

e3

Turn On Delay Time :

66 ns

Published :

2008

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

11210pF @ 50V

Width :

9.65mm

Termination :

SMD/SMT

Element Configuration :

Single

Power Dissipation-Max :

380W Tc

Dual Supply Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2.5 V

Transistor Application :

SWITCHING

Power Dissipation :

380W

Avalanche Energy Rating (Eas) :

290 mJ

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

270A

Mount :

Surface Mount

Rise Time :

220ns

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 165A, 10V

Resistance :

2.4MOhm

Number of Terminations :

2

Packaging :

Tube

Fall Time (Typ) :

110 ns

Number of Elements :

1

Transistor Element Material :

SILICON

Length :

10.67mm

Threshold Voltage :

2.5V