IRLS3813TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 148A, 10V

ECCN Code :

EAR99

Power Dissipation :

195W

Vgs (Max) :

±20V

Element Configuration :

Single

Turn On Delay Time :

32 ns

Input Capacitance (Ciss) (Max) @ Vds :

8020pF @ 25V

Rise Time :

202ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

195W Tc

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Series :

HEXFET®

Published :

2014

Weight :

3.949996g

Continuous Drain Current (ID) :

160A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Pins :

3

Fall Time (Typ) :

102 ns