IRLR8743PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Packaging :

Tube

Lead Free :

Lead Free

Factory Lead Time :

26 Weeks

Vgs(th) (Max) @ Id :

2.35V @ 100μA

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Fall Time (Typ) :

17 ns

Power Dissipation-Max :

135W Tc

Number of Pins :

3

Height :

2.3876mm

Pulsed Drain Current-Max (IDM) :

640A

Avalanche Energy Rating (Eas) :

250 mJ

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

19 ns

JESD-609 Code :

e3

Nominal Vgs :

1.9 V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Length :

6.7056mm

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Resistance :

3.1mOhm

Input Capacitance (Ciss) (Max) @ Vds :

4880pF @ 15V

Terminal Form :

Gull wing

Mount :

Surface Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Number of Terminations :

2

Power Dissipation :

135W

Threshold Voltage :

1.9V

Continuous Drain Current (ID) :

160A

Turn-Off Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

Rise Time :

35ns

Radiation Hardening :

No

Vgs (Max) :

±20V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)