IRLR8729TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

JESD-30 Code :

R-PSSO-G2

Width :

6.22mm

Published :

2003

Avalanche Energy Rating (Eas) :

74 mJ

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

6.7056mm

Turn On Delay Time :

10 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Height :

2.3876mm

Drain Current-Max (Abs) (ID) :

50A

Power Dissipation :

55W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drain-source On Resistance-Max :

0.0089Ohm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

260A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Rise Time :

47ns

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

11 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Power Dissipation-Max :

55W Tc

Continuous Drain Current (ID) :

58A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V