IRLR8729PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

50A

JESD-609 Code :

e3

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Recovery Time :

24 ns

Series :

HEXFET®

Packaging :

Tube

Radiation Hardening :

No

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Width :

6.22mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.73mm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

55W

JEDEC-95 Code :

TO-252AA

Continuous Drain Current (ID) :

58A

Published :

2008

Turn On Delay Time :

10 ns

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

260A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

74 mJ

REACH SVHC :

No SVHC

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

55W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

11 ns

Rise Time :

47ns

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Nominal Vgs :

1.8 V

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Resistance :

8.9mOhm

Height :

2.39mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Case Connection :

DRAIN