IRLR8256PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9.7 ns

Threshold Voltage :

1.8V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 25A, 10V

Recovery Time :

29 ns

Height :

2.39mm

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Fall Time (Typ) :

8.5 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

81A

Drain to Source Breakdown Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Dual Supply Voltage :

25V

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Nominal Vgs :

1.8 V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Length :

6.73mm

Mount :

Surface Mount

Width :

6.22mm

Element Configuration :

Single

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

ECCN Code :

EAR99

Published :

2008

Number of Terminations :

2

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

63W

Current - Continuous Drain (Id) @ 25°C :

81A Tc

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Rise Time :

46ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

86 mJ

Number of Pins :

3

Turn-Off Delay Time :

12 ns

Resistance :

5.7mOhm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Power Dissipation-Max :

63W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3