IRLR8103VTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0105Ohm

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Published :

2004

Number of Elements :

1

Mounting Type :

Surface Mount

Surface Mount :

yes

Power Dissipation-Max :

115W Tc

Transistor Element Material :

SILICON

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

91A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

363A

Vgs (Max) :

±20V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

91A Tc

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Case Connection :

DRAIN