IRLR8103TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

89A

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

89A Ta

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

350A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0085Ohm

Transistor Element Material :

SILICON

Power Dissipation-Max :

89W Tc

FET Type :

N-Channel

Case Connection :

DRAIN