IRLR8103

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

350A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

89W Ta

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

89A Ta

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Drain-source On Resistance-Max :

0.0085Ohm

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

89A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED