IRLR7843TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Published :

2008

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

Number of Pins :

3

Continuous Drain Current (ID) :

161A

Pulsed Drain Current-Max (IDM) :

620A

Width :

6.22mm

Length :

6.7056mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

161A Tc

Nominal Vgs :

2.3 V

Height :

2.2606mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Current Rating :

161A

Transistor Element Material :

SILICON

Power Dissipation-Max :

140W Tc

Fall Time (Typ) :

19 ns

Vgs (Max) :

±20V

Recovery Time :

59 ns

Number of Terminations :

2

Lead Free :

Lead Free

Power Dissipation :

140W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 15A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

34 ns

Turn On Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

4380pF @ 15V

Factory Lead Time :

12 Weeks

Threshold Voltage :

2.3V

Number of Elements :

1

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Contact Plating :

Tin

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Resistance :

3.3MOhm

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Rise Time :

42ns