IRLR6225PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 4.5V

Fall Time (Typ) :

52 ns

Recovery Time :

53 ns

Rise Time :

37ns

Turn-Off Delay Time :

63 ns

Vgs (Max) :

±12V

Power Dissipation-Max :

63W Tc

Height :

2.39mm

Factory Lead Time :

12 Weeks

Width :

6.22mm

Rds On (Max) @ Id, Vgs :

4m Ω @ 21A, 4.5V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 50μA

Operating Temperature :

-50°C~150°C TJ

REACH SVHC :

No SVHC

Turn On Delay Time :

9.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

800mV

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 10V

Series :

HEXFET®

Number of Pins :

3

Packaging :

Tube

Length :

6.73mm

Nominal Vgs :

800 mV

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

63W

Continuous Drain Current (ID) :

100A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount