IRLR3717TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

DS Breakdown Voltage-Min :

20V

Published :

2004

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

460 mJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

460A

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.004ohm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Power Dissipation-Max :

89W Tc

Surface Mount :

yes

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 10V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Case Connection :

DRAIN

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Number of Elements :

1