IRLR3715PBF
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- Mfr.Part #
- IRLR3715PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 54A DPAK
- Stock
- 53,466
- In Stock ：
- 53,466
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 54A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 54A
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2001
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Threshold Voltage :
- 3V
- Resistance :
- 14mOhm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- RoHS Compliant
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 1.06nF
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 71W
- Voltage - Rated DC :
- 20V
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 26A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 54A Tc
- Power Dissipation-Max :
- 3.8W Ta 71W Tc
- Drain to Source Resistance :
- 20mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 20V
- Supplier Device Package :
- D-Pak
- Rise Time :
- 73ns
- Mounting Type :
- Surface Mount
- Rds On Max :
- 14 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Datasheets
- IRLR3715PBF
IRLR3715PBF Documents
N-Channel Tube 14mOhm @ 26A, 10V ±20V 1060pF @ 10V 17nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3715PBF Overview
The maximum input capacitance of this device is 1060pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 54A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 20mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRLR3715PBF Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 20mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)
IRLR3715PBF Applications
There are a lot of Infineon Technologies
IRLR3715PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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