IRLR3715PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On Max :

14 mΩ

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.8W Ta 71W Tc

Rise Time :

73ns

Number of Pins :

4

Drain to Source Resistance :

20mOhm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

14mOhm @ 26A, 10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Continuous Drain Current (ID) :

54A

Supplier Device Package :

D-Pak

Resistance :

14mOhm

Published :

2001

Mounting Type :

Surface Mount

Power Dissipation :

71W

Input Capacitance :

1.06nF

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Drain to Source Breakdown Voltage :

20V

Packaging :

Tube

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Max Operating Temperature :

175°C

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 10V

Lead Free :

Lead Free

Voltage - Rated DC :

20V

Mount :

Surface Mount

Threshold Voltage :

3V

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Current Rating :

54A