IRLR3303TRPBF
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- Mfr.Part #
- IRLR3303TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 35A DPAK
- Stock
- 15,356
- In Stock ：
- 15,356
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- Turn On Delay Time :
- 7.4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Power Dissipation-Max :
- 68W Tc
- Gate to Source Voltage (Vgs) :
- 16V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Published :
- 2004
- Rds On Max :
- 31 mΩ
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Lead Free :
- Lead Free
- Rise Time :
- 200ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Supplier Device Package :
- D-Pak
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 35A
- Power Dissipation :
- 57W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Current Rating :
- 35A
- Number of Elements :
- 1
- Drain to Source Resistance :
- 45mOhm
- Voltage - Rated DC :
- 30V
- Turn-Off Delay Time :
- 14 ns
- Input Capacitance :
- 870pF
- Fall Time (Typ) :
- 36 ns
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 31mOhm @ 21A, 10V
- Datasheets
- IRLR3303TRPBF
N-Channel Tape & Reel (TR) 31mOhm @ 21A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3303TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 870pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLR3303TRPBF Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)
IRLR3303TRPBF Applications
There are a lot of Infineon Technologies
IRLR3303TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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