IRLR3110ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Height :

2.52mm

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Power Dissipation-Max :

140W Tc

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Resistance :

14mOhm

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

175°C

Continuous Drain Current (ID) :

42A

Pulsed Drain Current-Max (IDM) :

250A

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Radiation Hardening :

No

Fall Time (Typ) :

48 ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Width :

6.22mm

Vgs (Max) :

±16V

Length :

6.7056mm

Rise Time :

110ns

Mounting Type :

Surface Mount

Published :

2009

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 25V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

14m Ω @ 38A, 10V

Mount :

Surface Mount

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

140W

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Turn-Off Delay Time :

33 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

24 ns

Number of Elements :

1