IRLR3103TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

220A

JEDEC-95 Code :

TO-252AA

Series :

HEXFET®

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

240 mJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Power Dissipation-Max :

107W Tc

Drain Current-Max (Abs) (ID) :

20A

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.019Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Published :

1998

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V