IRLR2705TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Min Operating Temperature :

-55°C

Height :

2.3876mm

Number of Elements :

1

Power Dissipation-Max :

68W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

40mOhm @ 17A, 10V

Rds On Max :

40 mΩ

Drain to Source Breakdown Voltage :

55V

Input Capacitance :

880pF

Fall Time (Typ) :

29 ns

Element Configuration :

Single

FET Type :

N-Channel

Mounting Type :

Surface Mount

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

46W

Rise Time :

100ns

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Continuous Drain Current (ID) :

28A

Turn On Delay Time :

8.9 ns

Published :

2005

Gate to Source Voltage (Vgs) :

16V

Radiation Hardening :

No

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Drain to Source Resistance :

65mOhm

Length :

6.7056mm

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Supplier Device Package :

D-Pak