IRLR2703PBF
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- Mfr.Part #
- IRLR2703PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A DPAK
- Stock
- 25,505
- In Stock ：
- 25,505
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 77 mJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 20 ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Number of Pins :
- 3
- Power Dissipation-Max :
- 45W Tc
- Pulsed Drain Current-Max (IDM) :
- 96A
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Continuous Drain Current (ID) :
- 23A
- Mount :
- Surface Mount
- Height :
- 2.39mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current Rating :
- 23A
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Resistance :
- 45mOhm
- Vgs (Max) :
- ±16V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Recovery Time :
- 97 ns
- Rise Time :
- 140ns
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation :
- 38W
- Series :
- HEXFET®
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Width :
- 6.22mm
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn-Off Delay Time :
- 12 ns
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 16V
- Threshold Voltage :
- 1V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Dual Supply Voltage :
- 30V
- Lead Free :
- Lead Free
- Nominal Vgs :
- 1 V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Published :
- 2003
- Turn On Delay Time :
- 8.5 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Datasheets
- IRLR2703PBF
N-Channel Tube 45m Ω @ 14A, 10V ±16V 450pF @ 25V 15nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR2703PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRLR2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V
IRLR2703PBF Applications
There are a lot of Infineon Technologies
IRLR2703PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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