IRLR210ATM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

24 mJ

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.35A, 5V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Surface Mount :

yes

Terminal Position :

Single

Number of Terminations :

2

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

2.7A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

Vgs (Max) :

±20V

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta 21W Tc