IRLR120TR
- Mfr.Part #
- IRLR120TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.7A DPAK
- Stock
- 13,863
- In Stock :
- 13,863
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- DS Breakdown Voltage-Min :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Pulsed Drain Current-Max (IDM) :
- 31A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±10V
- Continuous Drain Current (ID) :
- 7.7A
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 100V
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 4.6A, 5V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Drain-source On Resistance-Max :
- 0.27Ohm
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2016
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Datasheets
- IRLR120TR
N-Channel Tape & Reel (TR) 270m Ω @ 4.6A, 5V ±10V 490pF @ 25V 12nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR120TRR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 210 mJ.The maximum input capacitance of this device is 490pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 31A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.
IRLR120TRR Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 7.7A
based on its rated peak drain current 31A.
a 100V drain to source voltage (Vdss)
IRLR120TRR Applications
There are a lot of Vishay Siliconix
IRLR120TRR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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