IRLR110

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Packaging :

Tube

Power Dissipation :

2.5W

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Rds On Max :

540 mΩ

Published :

2016

Drain to Source Breakdown Voltage :

100V

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Turn-Off Delay Time :

16 ns

Continuous Drain Current (ID) :

4.3A

Rise Time :

47ns

FET Type :

N-Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Gate to Source Voltage (Vgs) :

10V

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Turn On Delay Time :

9.3 ns

Input Capacitance :

250pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

540mOhm @ 2.6A, 5V

Fall Time (Typ) :

17 ns

Power Dissipation-Max :

2.5W Ta 25W Tc

Supplier Device Package :

D-Pak

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

21 Weeks

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Drain to Source Resistance :

540mOhm