IRLR024ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Length :

6.7056mm

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 5V

Rds On (Max) @ Id, Vgs :

58mOhm @ 9.6A, 10V

Power Dissipation-Max :

35W Tc

Turn-Off Delay Time :

19 ns

Supplier Device Package :

D-Pak

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

58mOhm

Power Dissipation :

35W

Width :

6.22mm

Turn On Delay Time :

8.2 ns

Drain to Source Voltage (Vdss) :

55V

Rds On Max :

58 mΩ

Drain to Source Breakdown Voltage :

55V

Mount :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Published :

2004

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Input Capacitance :

380pF

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Continuous Drain Current (ID) :

16mA

Max Operating Temperature :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Radiation Hardening :

No

Height :

2.38mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

43ns