IRLR024TR
- Mfr.Part #
- IRLR024TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A DPAK
- Stock
- 26,347
- In Stock :
- 26,347
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 870pF
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 8.4A, 5V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Number of Pins :
- 2
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- D-Pak
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 41 ns
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Published :
- 2016
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 14A
- Voltage - Rated DC :
- 60V
- Lead Free :
- Contains Lead
- Turn-Off Delay Time :
- 23 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 5V
- Continuous Drain Current (ID) :
- 14A
- Turn On Delay Time :
- 11 ns
- Factory Lead Time :
- 21 Weeks
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 100MOhm
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Min Operating Temperature :
- -55°C
- Rise Time :
- 110ns
- Rds On Max :
- 100 mΩ
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- IRLR024TR
N-Channel Tape & Reel (TR) 100mOhm @ 8.4A, 5V ±10V 870pF @ 25V 18nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024TR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLR024TR Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLR024TR Applications
There are a lot of Vishay Siliconix
IRLR024TR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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