IRLR024NTRPBF

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Mfr.Part #
IRLR024NTRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 17A DPAK
Stock
450,853
In Stock :
450,853

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
17A
Rds On (Max) @ Id, Vgs :
65m Ω @ 10A, 10V
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Dual Supply Voltage :
55V
JEDEC-95 Code :
TO-252AA
Number of Channels :
1
Pulsed Drain Current-Max (IDM) :
72A
Voltage - Rated DC :
55V
Published :
2004
Drain to Source Breakdown Voltage :
55V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
Contact Plating :
Tin
Fall Time (Typ) :
29 ns
Nominal Vgs :
2 V
Height :
2.52mm
Time@Peak Reflow Temperature-Max (s) :
30
ECCN Code :
EAR99
FET Type :
N-Channel
Rise Time :
74ns
Transistor Application :
SWITCHING
Turn On Delay Time :
7.1 ns
Transistor Element Material :
SILICON
Lead Free :
Contains Lead, Lead Free
Factory Lead Time :
12 Weeks
Resistance :
80mOhm
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Max Junction Temperature (Tj) :
175°C
Width :
6.22mm
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Packaging :
Tape and Reel (TR)
Current Rating :
17A
Case Connection :
DRAIN
JESD-609 Code :
e3
Recovery Time :
90 ns
Termination :
SMD/SMT
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 25V
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
16V
Number of Pins :
3
Number of Elements :
1
Mounting Type :
Surface Mount
Vgs (Max) :
±16V
Mount :
Surface Mount
Power Dissipation-Max :
45W Tc
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
Additional Feature :
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Vgs(th) (Max) @ Id :
2V @ 250μA
Turn-Off Delay Time :
20 ns
REACH SVHC :
No SVHC
Power Dissipation :
45W
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Length :
6.7056mm
Threshold Voltage :
2V
Series :
HEXFET®
Avalanche Energy Rating (Eas) :
68 mJ
Terminal Form :
Gull wing
Datasheets
IRLR024NTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR024NTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, IRLR024NTRPBF pinout, IRLR024NTRPBF datasheet PDF, IRLR024NTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR024NTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLR024NTRPBF


N-Channel Tape & Reel (TR) 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR024NTRPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.The maximum input capacitance of this device is 480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4V 10V), this device helps reduce its power consumption.

IRLR024NTRPBF Features


the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 72A.
a threshold voltage of 2V


IRLR024NTRPBF Applications


There are a lot of Infineon Technologies
IRLR024NTRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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