IRLD120PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.3W

Fall Time (Typ) :

64 ns

Turn-Off Delay Time :

21 ns

Length :

6.2738mm

Height :

3.3782mm

Package / Case :

4-DIP (0.300, 7.62mm)

Drain to Source Resistance :

270mOhm

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

270mOhm @ 780mA, 5V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Published :

2004

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Number of Elements :

1

Voltage - Rated DC :

100V

REACH SVHC :

Unknown

Mounting Type :

Through Hole

Rds On Max :

270 mΩ

Vgs (Max) :

±10V

Resistance :

270mOhm

Input Capacitance :

490pF

Min Operating Temperature :

-55°C

Power Dissipation-Max :

1.3W Ta

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

9.8 ns

Mount :

Through Hole

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Rise Time :

64ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.3A

Number of Pins :

4

Threshold Voltage :

2V

Radiation Hardening :

No

Width :

5.0038mm

Current Rating :

1.3A

Gate to Source Voltage (Vgs) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Drain to Source Voltage (Vdss) :

100V