IRLD120

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Resistance :

270mOhm

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Mount :

Through Hole

Rds On Max :

270 mΩ

Packaging :

Tube

Rise Time :

64ns

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

1.3A

Width :

6.29mm

Power Dissipation :

1.3W

Max Operating Temperature :

175°C

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Published :

2016

Drain to Source Resistance :

270mOhm

Number of Pins :

4

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Fall Time (Typ) :

64 ns

Turn-Off Delay Time :

21 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Channels :

1

Power Dissipation-Max :

1.3W Ta

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Rds On (Max) @ Id, Vgs :

270mOhm @ 780mA, 5V

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

100V

Package / Case :

4-DIP (0.300, 7.62mm)

Turn On Delay Time :

9.8 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

10V

Height :

3.37mm

Input Capacitance :

490pF

Length :

5mm

Current Rating :

1.3A