IRLD014

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Mfr.Part #
IRLD014
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET N-CH 60V 1.7A 4DIP
Stock
9,039
In Stock :
9,039

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±10V
Input Capacitance :
400pF
Power Dissipation-Max :
1.3W Ta
Height :
3.37mm
Turn On Delay Time :
9.3 ns
FET Type :
N-Channel
Package / Case :
4-DIP (0.300, 7.62mm)
Length :
5mm
Mount :
Through Hole
Drain to Source Breakdown Voltage :
60V
Fall Time (Typ) :
110 ns
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Gate to Source Voltage (Vgs) :
10V
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
1.7A
Gate Charge (Qg) (Max) @ Vgs :
8.4nC @ 5V
Width :
6.29mm
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
Number of Pins :
4
Number of Channels :
1
Turn-Off Delay Time :
17 ns
Current - Continuous Drain (Id) @ 25°C :
1.7A Ta
Rds On Max :
200 mΩ
Min Operating Temperature :
-55°C
Max Operating Temperature :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
4V 5V
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
200mOhm @ 1A, 5V
Drain to Source Voltage (Vdss) :
60V
Packaging :
Tube
Vgs(th) (Max) @ Id :
2V @ 250μA
Voltage - Rated DC :
60V
RoHS Status :
Non-RoHS Compliant
Drain to Source Resistance :
200mOhm
Lead Free :
Contains Lead
Power Dissipation :
1.3W
Current Rating :
1.7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Rise Time :
110ns
Introducing Transistors - FETs, MOSFETs - Single Vishay IRLD014 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:4-DIP (0.300, 7.62mm), Operating Temperature:-55°C~175°C TJ, Number of Pins:4, Number of Channels:1, Mounting Type:Through Hole, IRLD014 pinout, IRLD014 datasheet PDF, IRLD014 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRLD014 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRLD014


N-Channel Tube 200mOhm @ 1A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V 4-DIP (0.300, 7.62mm)

IRLD014 Overview


A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.

IRLD014 Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)


IRLD014 Applications


There are a lot of Vishay Siliconix
IRLD014 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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