IRL3713PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

3mOhm

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

260A Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 15V

Turn On Delay Time :

16 ns

Contact Plating :

Tin

Power Dissipation-Max :

330W Tc

Published :

2003

Fall Time (Typ) :

57 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.5V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Voltage - Rated DC :

30V

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

30V

Height :

9.017mm

Factory Lead Time :

14 Weeks

Nominal Vgs :

2.5 V

Rds On (Max) @ Id, Vgs :

3m Ω @ 38A, 10V

Number of Pins :

3

Length :

10.6426mm

Turn-Off Delay Time :

40 ns

Width :

4.82mm

Packaging :

Tube

Continuous Drain Current (ID) :

260A

Power Dissipation :

200W

Current Rating :

250A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

160ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Series :

HEXFET®

Mount :

Through Hole