IRL3102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Turn-Off Delay Time :

80 ns

Power Dissipation :

89W

Nominal Vgs :

700 mV

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

61A

Vgs (Max) :

±10V

Supplier Device Package :

D2PAK

Number of Pins :

3

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 15V

Gate to Source Voltage (Vgs) :

10V

Lead Free :

Lead Free

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 250μA

Power Dissipation-Max :

89W Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

15mOhm

Rds On (Max) @ Id, Vgs :

13mOhm @ 37A, 7V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Min Operating Temperature :

-55°C

Rise Time :

130ns

Drain to Source Breakdown Voltage :

20V

Current Rating :

61A

Element Configuration :

Single

Input Capacitance :

2.5nF

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Voltage - Rated DC :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Max Operating Temperature :

150°C

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Rds On Max :

13 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

110 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC