IRGS30B60KPBF
- Mfr.Part #
- IRGS30B60KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 78A 370W D2PAK
- Stock
- 34,525
- In Stock :
- 34,525
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- RoHS Compliant
- Width :
- 4.83mm
- Turn On Delay Time :
- 46 ns
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge :
- 102nC
- JESD-609 Code :
- e3
- Fall Time-Max (tf) :
- 42ns
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Turn On Time :
- 74 ns
- Length :
- 10.668mm
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 30A
- Packaging :
- Tube
- Number of Elements :
- 1
- Number of Pins :
- 3
- Switching Energy :
- 350μJ (on), 825μJ (off)
- Number of Terminations :
- 2
- Base Part Number :
- IRGS30B60KPBF
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 370W
- Td (on/off) @ 25°C :
- 46ns/185ns
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- IGBT Type :
- NPT
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Nom (toff) :
- 237 ns
- Factory Lead Time :
- 11 Weeks
- Collector Emitter Voltage (VCEO) :
- 2.35V
- Collector Emitter Breakdown Voltage :
- 600V
- Power Dissipation :
- 370W
- Height :
- 4.699mm
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Transistor Application :
- Motor Control
- Collector Emitter Saturation Voltage :
- 2.35V
- Max Collector Current :
- 78A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Current - Collector Pulsed (Icm) :
- 120A
- Input Type :
- Standard
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 185 ns
- Lead Free :
- Lead Free
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRGS30B60KPBF

IRGS30B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS30B60KPBF Description
The Infineon Technologies IRGS30B60KPBF is a 600V Ultrafast 10-30 kHz IGBT in a D2-PAK Package.
IRGS30B60KPBF Features
-
Square RBSOA
-
Positive VCE (on) Temperature Coefficient
-
Maximum Junction Temperature rated at 175°C
-
Low VCE (on) Non-Punch Through IGBT Technology
-
10μs Short Circuit Capability
-
Lead-Free
IRGS30B60KPBF Applications
-
Automotive
-
Traction
-
Energy transmission
-
Industrial &consumer system
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