IRG7PSH50UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

MATTE TIN OVER NICKEL

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2V

JESD-609 Code :

e3

Power - Max :

462W

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

150A

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Test Condition :

600V, 50A, 5 Ω, 15V

Rise Time-Max :

60ns

Max Collector Current :

116A

Collector Emitter Breakdown Voltage :

1.2kV

Fall Time-Max (tf) :

65ns

Max Power Dissipation :

462W

Gate-Emitter Voltage-Max :

30V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6V

RoHS Status :

RoHS Compliant

Reverse Recovery Time :

190 ns

Gate Charge :

440nC

Turn Off Time-Nom (toff) :

650 ns

Number of Terminations :

3

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

1200V

IGBT Type :

Trench

Turn On Time :

70 ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

ECCN Code :

EAR99

Mount :

Through Hole

Number of Elements :

1

Switching Energy :

3.6mJ (on), 2.2mJ (off)

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

35ns/430ns

Number of Pins :

247

Peak Reflow Temperature (Cel) :

260