IRFS7730PBF
- Mfr.Part #
- IRFS7730PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 195A D2PAK
- Stock
- 8,252
- In Stock :
- 8,252
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 407nC @ 10V
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width :
- 9.65mm
- Power Dissipation :
- 375W
- Continuous Drain Current (ID) :
- 195A
- Number of Pins :
- 3
- Rise Time :
- 120ns
- Element Configuration :
- Single
- Weight :
- 3.949996g
- Power Dissipation-Max :
- 375W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Factory Lead Time :
- 17 Weeks
- Height :
- 4.83mm
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 180 ns
- Turn On Delay Time :
- 21 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 13660pF @ 25V
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Length :
- 10.67mm
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®, StrongIRFET™
- Fall Time (Typ) :
- 115 ns
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 75V
- Datasheets
- IRFS7730PBF

N-Channel Tube 2.6m Ω @ 100A, 10V ±20V 13660pF @ 25V 407nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7730PBF Description
The Infineon Technologies IRFS7730PBF is a 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.
IRFS7730PBF Features
-
Optimized for broadest availability from distribution partners
-
Product qualification according to JEDEC standard
-
Optimized for 10 V gate-drive voltage (called normal level)
-
Silicon optimized for applications switching below <100 KHz
-
Softer body-diode compared to previous silicon generation
-
Industry-standard surface-mount power package
-
High-current carrying capability package (up to 195 A, die-size dependent)
-
Capable of being wave soldered
IRFS7730PBF Application
-
Brushed motor drive applications
-
BLDC motor drive applications
-
Battery-powered circuits
-
Half-bridge and full-bridge topologies
-
Synchronous rectifier applications
-
Resonant mode power supplies
-
OR-ing and redundant power switches
-
DC/DC and AC/DC converters
-
DC/AC inverters
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