IRFS7430-7PPBF
- Mfr.Part #
- IRFS7430-7PPBF
- Manufacturer
- International Rectifier
- Package / Case
- Datasheet
- Download
- Description
- HEXFET POWER MOSFET
- Stock
- 2,999
- In Stock :
- 2,999
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.67mm
- Vgs(th) (Max) @ Id :
- 3.9V @ 250μA
- Turn On Delay Time :
- 28 ns
- Fall Time (Typ) :
- 93 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®, StrongIRFET™
- Width :
- 9.65mm
- Power Dissipation-Max :
- 375W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 240A
- ECCN Code :
- EAR99
- Number of Pins :
- 7
- Rise Time :
- 79ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 0.75m Ω @ 100A, 10V
- FET Type :
- N-Channel
- Published :
- 2005
- Mount :
- Surface Mount
- Power Dissipation :
- 375W
- Gate Charge (Qg) (Max) @ Vgs :
- 460nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.59999g
- Input Capacitance (Ciss) (Max) @ Vds :
- 13975pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Factory Lead Time :
- 14 Weeks
- Turn-Off Delay Time :
- 161 ns
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Datasheets
- IRFS7430-7PPBF
N-Channel Tube 0.75m Ω @ 100A, 10V ±20V 13975pF @ 25V 460nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)
IRFS7430-7PPBF Description
IRFS7430-7PPBF Features
-
Enhanced Dynamic dV/dt, Avalanche, and Gate Ruggedness
-
Avalanche and Fully Characterized Capacitance SOA
-
Improved dV/dt and dI/dt capability for body diodes
-
RoHS Compliant and Lead-Free
IRFS7430-7PPBF Applications
-
Applications for brushed motor drives and BLDC motor drives
-
topologies with PWM inverters
-
Battery-operated devices
-
Topologies with a half-bridge and a full-bridge
-
Applications of electronic ballasts
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