IRFR3910TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

-55°C~175°C TJ

Published :

1998

Width :

6.22mm

Transistor Application :

SWITCHING

Recovery Time :

190 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

115m Ω @ 10A, 10V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Dual Supply Voltage :

100V

Element Configuration :

Single

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Length :

6.7056mm

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Resistance :

115mOhm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

37 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

16A

Drain to Source Breakdown Voltage :

100V

Height :

2.3876mm

Contact Plating :

Tin

Mount :

Surface Mount

Power Dissipation-Max :

79W Tc

Threshold Voltage :

4V

Voltage - Rated DC :

100V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Radiation Hardening :

No

Series :

HEXFET®

Lead Free :

Contains Lead, Lead Free

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

52W

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Turn On Delay Time :

6.4 ns

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Rise Time :

27ns

FET Type :

N-Channel